Samsung presented its first sixth generation HBM4 high bandwidth memory chip at the SEDEX 2025 expo in South Korea last month. But the company is still advancing its technology. Report suggests that Samsung has already produced a faster HBM4 chip and it will officially announce this upgraded version early next year at the International Solid State Circuits Conference.
New Samsung HBM4 chip expected to deliver up to 40% higher performance
A recent report from TheElec claims that Samsung will showcase a faster HBM4 chip at the ISSCC conference scheduled for February 15–19, 2026 in San Francisco, California and USA. This upcoming announcement highlights Samsung’s ongoing effort to stay ahead in advanced memory development. In addition, During the ISSCC 2026 media briefing held at Space Share in Jung-gu, Seoul on November 26, SK Hynix Fellow Kim Dong-gyun who also serves on the ISSCC Korea Committee, confirmed that both Samsung and SK Hynix will showcase their new HBM4 chips next year. His remarks suggest that both companies are preparing major improvements for the upcoming event.
Samsung’s first 36GB HBM4 chip offered a bandwidth of 2.4TB/s, while the next generation HBM4 chip is expected to reach speeds of up to 3.3TB/s. This represents a 37.5% increase in performance over the previous chip. Reports explain that this boost was made through a completely redesigned stacked structure and a more efficient interface system. These improvements help to reduce communication barriers inside the memory stack. As a result, the chip become more efficient and better suited for demanding applications such as AI and high performance computing.
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